IndiumV3, Main, Repository, bibRecord, 000876

Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Identifieur interne : 000876 ( Main/Repository ); précédent : 000875; suivant : 000877

Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Auteurs : RBID : Pascal:13-0099583

Descripteurs français

Pascal (Inist)
- Méthode Monte Carlo, Ionisation choc, Semiconducteur III-V, Composé III-V, Champ intense, Haute fréquence, Effet champ électrique, Génération porteur charge, Paire électron trou, Chauffage électron, Quantité mouvement, Temps relaxation, Ionisation champ, Dépendance fréquence, Antimoniure d'indium, Donnée expérimentale, Semiconducteur type n, Impact électron, 7920K.

English descriptors

KwdEn :
- Charge carrier generation, Electric field effects, Electron heating, Electron hole pair, Electron impact, Experimental data, Field ionization, Frequency dependence, High field, High frequency, III-V compound, III-V semiconductors, Impact ionization, Indium antimonides, Momentum, Monte Carlo methods, Relaxation time, n type semiconductor.

Abstract

Monte Carlo computer simulations of electron impact ionization in InSb crystal are carried out for both instantly switched on dc and high-frequency electric fields. It is established that the rate of generation of electron-hole pairs decreases with the increase of electric field frequency, due to the inertia of electron heating by high-frequency electric field. For fields oscillating at frequencies much higher than the reciprocal momentum relaxation time, the impact ionization threshold field is found to be a linear function of frequency. Good agreement between calculations and available experimental data has been obtained.

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Le document en format XML

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<author><name sortKey="Asmontas, S" uniqKey="Asmontas S">S. Asmontas</name>
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<author><name sortKey="Raguotis, R" uniqKey="Raguotis R">R. Raguotis</name>
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<author><name sortKey="Bumeliene, S" uniqKey="Bumeliene S">S. Bumeliene</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carrier generation</term>
<term>Electric field effects</term>
<term>Electron heating</term>
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<term>Experimental data</term>
<term>Field ionization</term>
<term>Frequency dependence</term>
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<term>High frequency</term>
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<term>Impact ionization</term>
<term>Indium antimonides</term>
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<term>Dépendance fréquence</term>
<term>Antimoniure d'indium</term>
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<front><div type="abstract" xml:lang="en">Monte Carlo computer simulations of electron impact ionization in InSb crystal are carried out for both instantly switched on dc and high-frequency electric fields. It is established that the rate of generation of electron-hole pairs decreases with the increase of electric field frequency, due to the inertia of electron heating by high-frequency electric field. For fields oscillating at frequencies much higher than the reciprocal momentum relaxation time, the impact ionization threshold field is found to be a linear function of frequency. Good agreement between calculations and available experimental data has been obtained.</div>
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<fC01 i1="01" l="ENG"><s0>Monte Carlo computer simulations of electron impact ionization in InSb crystal are carried out for both instantly switched on dc and high-frequency electric fields. It is established that the rate of generation of electron-hole pairs decreases with the increase of electric field frequency, due to the inertia of electron heating by high-frequency electric field. For fields oscillating at frequencies much higher than the reciprocal momentum relaxation time, the impact ionization threshold field is found to be a linear function of frequency. Good agreement between calculations and available experimental data has been obtained.</s0>
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Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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